| PART |
Description |
Maker |
| M28F101 M28F101-100K1 M28F101-100K3 M28F101-100K6 |
1 Mb 128K x 8/ Chip Erase FLASH MEMORY
1 Mb 128K x 8, Chip Erase FLASH MEMORY
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MT5C1009DCJ-35/883C MT5C1009SOJ-35/883C MT5C1009F- |
128K x 8 SRAM with chip and output enable
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE
Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE 128K的8的SRAM在芯
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE
|
Austin Semiconductor
Electronic Theatre Controls, Inc.
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
16-Megabit097152*8-bit）CMOS 5.0 Volt-only，sector Erase Flash memory
LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1
LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位）CMOS 5.0伏只，扇区擦除闪
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| LC87F5JC8A |
FROM 128K byte, RAM 4096 byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| M5M29GT161BWG M5M29GT161BVP M5M29GB161BVP |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16777216-bit CMOS 3.3V-only, block erase flash memory
|
Mitsubishi Electric Corporation
|
| DS5001FP05 |
128k Soft Microprocessor Chip
|
Dallas Semiconductor
|
| DS5001FP-16N DS5001FP-16 DS5001FP DS5001FP-12-44 |
128k Soft Microprocessor Chip
|
MAXIM - Dallas Semiconductor
Dallas Semiconducotr
DALLAS[Dallas Semiconductor]
|
| MT5C1009 MT5C1009SOJ-70_883C MT5C1009C-15_XT MT5C1 |
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE
|
AUSTIN[Austin Semiconductor]
ETC
|
| GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
