| PART |
Description |
Maker |
| ID621K30 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|半桥| 1KV交五（巴西）国际消费电子展| 300我（丙）
|
Accutek Microcircuit, Corp.
|
| CM100DY24H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Toshiba, Corp.
|
| DIM400PHM17-A000-15 |
IGBT Half Bridge Module
|
Dynex Semiconductor
|
| SIM75D06AV1 |
“HALF-BRIDGE IGBT MODULE
|
SemiWell Semiconductor
|
| GP250MHB06S |
Half Bridge IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| DIM200WHS12-E000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| DIM200PHM33-F00011 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| DIM400PHM17-A000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| DIM200WHS17-A000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| BSM300GA170DN2E3166 300A17E2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
| BSM400GB60DN2 400B06N2 C67070-A2120-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
