| PART |
Description |
Maker |
| BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02/ STYLE 3 SOT-323/SC-70
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BAV70WT1 ON0133 |
From old datasheet system
CASE 419-02, STYLE 5 SC-70/SOT-323
|
MOTOROLA[Motorola, Inc]
|
| BAV99WT1 BAV99RWT1 ON0136 BAV99 |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type
SC-70/SOT-323 Dual Series Switching Diode
BAV99WT1 CASE 419-2, STYLE 9 SC-0/SOT-23
From old datasheet system
|
ROHM
ON Semi
MOTOROLA[Motorola, Inc]
|
| BC846AWT1 BC847AWT1 ON0161 BC848BWT1 BC848AWT1 BC8 |
General Purpose Transistors(NPN Silicon) 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CASE 419-2, STYLE 3 SOT-23/SC-0
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| DTC114YE DTC114YE_D ON0281 |
CASE 463-01/ STYLE 1 SOT-416/SC-90
CASE 463-01, STYLE 1 SOT-416/SC-90
CASE 463-1, STYLE 1 SOT-16/SC-0
From old datasheet system
|
Motorola Inc
ON Semi
MOTOROLA[Motorola, Inc]
|
| BAR63V-04W-GS18 BAR63V-04W-GS08 |
RF PIN Diodes - Dual, Series in SOT-323 射频PIN二极双，系列采用SOT - 323
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| BAV70LT1 ON0132 |
CASE 318-08, STYLE 9 SOT-23 (TO-236AB)
From old datasheet system
Monolithic Dual Switching Diode Common Cathode
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
| GA1F4Z GA1F4ZL65 GA1F4ZL64 GA1F4Z-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 323
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| 2SC5463 2SC5463O |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-323 晶体管|晶体管|叩| 12V的五（巴西）总裁| 60mA的一（c）|的SOT - 323
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba, Corp.
Toshiba Semiconductor
|
| GA1A4Z GA1A4Z-T2 GA1A4ZL69-T1 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 323
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR SUPER MINIMOLD PACKAGE-3
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
Hybrid transistor
|
NEC, Corp.
|
