PART |
Description |
Maker |
BAS40LT1 ON0121 BAS4 |
CASE 318-08, STYLE 8 SOT-23 TO-236AB SILICON, SIGNAL DIODE, TO-236AB CASE 318-08/ STYLE 8 SOT-23 TO-236AB From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
BAS4004LT1 |
CASE 318 08/ STYLE 12 SOT 23 (TO 236AB) CASE 318 08, STYLE 12 SOT 23 (TO 236AB)
|
Motorola, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
BAS7004LT1 |
CASE 318-08, STYLE 12 SOT-23 TO-236AB CASE 318-08 STYLE 12 SOT-23 TO-236AB
|
Motorola, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
BSS123LT1 BSS123LT1_D ON0223 |
TMOS FET Transistor(N-Channel) CASE 318-08, STYLE 21 SOT-23 (TO?36AB) From old datasheet system
|
Motorola Inc Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
2N5555 ON0063 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA) CASE 29-4, STYLE 5TO-2 (TO-26AA) From old datasheet system JFET Switching
|
MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
|
MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
|
BC846AWT1 BC847AWT1 ON0161 BC848BWT1 BC848AWT1 BC8 |
General Purpose Transistors(NPN Silicon) 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR CASE 419-2, STYLE 3 SOT-23/SC-0 From old datasheet system
|
ONSEMI[ON Semiconductor]
|
PCK2001M_6 PCK2001M |
14.318-150 MHz IIC 1:10 clock buffer(14.318-150 MHz IIC 1:10时钟缓冲 14.318-150兆赫进口:10时钟缓冲器(14.318-150兆赫进口:10时钟缓冲器) From old datasheet system
|
NXP Semiconductors N.V.
|
MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3 |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
|
BOURNS INC
|
2N2894 |
CASE 22-03, STYLE 1 TO-18(TO-206AA)
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
|