| PART |
Description |
Maker |
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| BAT15-03W Q62702-A1104 |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| INA-54063-BLK |
3.0 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
| AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| AT-41486 AT-41486-BLK |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| Q62702-F788 A0536 BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)
From old datasheet system
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range and broadband analog and digital applications)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| INA-30311 INA-30311-TR1 |
1 GHz Low Noise Silicon MMIC Amplifier
1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
| UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
|
| UPC2713T-E3 UPC2713T |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
Duracell
NEC[NEC]
|
| UPC2713T UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC
|
| CLT-13-6016 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
