| PART |
Description |
Maker |
| KSD362OJ69Z |
5 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| SGP10N60RUFTU |
16 A, 600 V, N-CHANNEL IGBT, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| BTA10-800AW BTA10-200AW BTA10-400AW BTA10-700AW BT |
TRIAC|800V V(DRM)|10A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220
TRIAC|700V V(DRM)|10A I(T)RMS|TO-220
Transient Voltage Suppressor Diodes 可控硅| 600V的五（DRM）的| 10A条口（T）的有效值|20
|
Volex PLC
|
| DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB |
TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
|
Won-Top Electronics Co., Ltd.
ON Semiconductor
|
| STB80NF04 |
N-CHANNEL 40V - 0.008 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFET N沟道40V 0.008欧姆- 80A条D2PAK/TO-220 STRIPFET二功率MOSFET
|
STMicroelectronics N.V.
|
| STP4NC60A STP4NC60AFP STB4NC60A-1 |
N-CHANNEL 600V 1.8 OHM 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMeshII MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET
32BIT MCU,GPT,SIM,QSM N沟道600V 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh第二MOSFET的⑩
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STGB3NB60KD STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH??IGBT
(STGP3NB60K / STGB3NB60K) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESHIGBT N沟道3A 600V IGBT的TO-220/DPAK/D2PAK PowerMESH
(STGD3NB60K / STGP3NB60K / STGP3NB60KD / STGB3NB60KD) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
|
STMicroelectronics N.V.
ST Microelectronics
|
| STP3015L STB3015 STB3015L 6057 |
From old datasheet system
N - CHANNEL 30V - 0.013 - 40A - D 2 PAK/TO-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET -通道30V 0.013欧姆- 40A D2PAK/TO-220 STripFETO的功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STB6NC90Z STB6NC90Z-1 STP6NC90ZFP STP6NC90Z |
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N沟道900V - 1.55ohm - 5.4A TO-220/FP/D?巴基斯我?巴基斯坦齐保护的PowerMESH⑩三MOSFET
N-CHANNEL 900V - 1.55 OHM - 5.4A TO-220/FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| APT30DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 30; VR (V): 600; trr (nsec): 19; VF (V): 2; Qrr (nC): 400; 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
|
Microsemi, Corp.
|
| BTA06-400A BTA06-400S BTA06-400T BTA06-700A BTA06- |
TRIAC|600V V(DRM)|6A I(T)RMS|TO-220
TRIAC|700V V(DRM)|6A I(T)RMS|TO-220 可控硅| 700V的五（DRM）的| 6A条口（T）的有效值|20
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 6A条口T）的有效值|20
|
STMicroelectronics N.V.
|
