| PART |
Description |
Maker |
| TD300 |
15V TRIPLE GIBT/MOS DRIVER
|
SGS Thomson Microelectronics
|
| EG3014 |
Power MOS tube / IGBT gate driver chip
|
EGmicro
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| AD8133NBSP AD8133ACPZ-REEL7 AD8133 AD8133ACP-REEL |
Triple Differential Driver With Output Pull-Down TRIPLE LINE DRIVER, QCC24
Triple Differential Driver with Output Pulldown
|
ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
|
| MP4412 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| APTGF90TA60P |
Triple phase leg NPT IGBT Power Module
Triple Phase Leg - IGBT
|
Advanced Power Technology
|
| APTGF50TA120P |
Triple Phase Leg - IGBT
Triple phase leg NPT IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
| IRG4PC50UD IRG4PC50UD-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| APTGT50TDU170P |
Triple Dual Common Source - IGBT
Triple Dual Common Source Trench IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
| IRG4PC30KD IRG4PC30KD-EPBF |
600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
28 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier]
Vishay Intertechnology, Inc.
|
| IRG4BC30U-S IRG4BC30US |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
