| PART |
Description |
Maker |
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| BCR20A BCR20E BCR20C |
MEDIUM POWER USE A/ B/ C : NON-INSULATED TYPE/ E : INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM25G45EM |
N-CHANNEL INSULATED-GATE BOPOLAR TRANSISTOR
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
|
List of Unclassifed Manufacturers
ETC[ETC]
Silicon Standard Corp.
|
| 1900500010 0190050010 C-2265 SD-19005-001 |
InsulKrimp Fully Insulated Female Quick
InsulKrimp垄芒 Fully Insulated Female Quick
|
Molex Electronics Ltd.
|
| QM5HG-24 |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
MEDIUM POWER SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2-1191566-7 2-1190527-4 2-1191560-6 014389-000 2-1 |
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATED COPPER, LIGHTWEIGHT
WIRE RADIATIONN-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
|
Tyco Electronics
|
