| PART |
Description |
Maker |
| SIR-56ST3F |
Sensors > Infrared Light Emitting Diodes
|
ROHM
|
| TLN210 TLN210F |
INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Corporation
Toshiba Semiconductor
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| LNA2702L 0878 LN59 LN59L LN59-LNA2702L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
From old datasheet system
GaAs Bi-directional Infrared Light Emitting Diodes
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| G9203-256D-15 |
Near infrared (0.9 to 1.7 m) image sensors
|
Hamamatsu Corporation
|
| IRA-E940ST1 IRA-E420 IRA-E420QW1 IRA-E420S1 IRA-E4 |
Pyroelectric Infrared Sensors
|
MURATA[Murata Manufacturing Co., Ltd.]
|
| G9208-256W G9211-256S G9213-256S G9206-256W G9212- |
Near infrared image sensors (0.9 to 1.67 渭m / 2.55 渭m)
Near infrared image sensors (0.9 to 1.67 μm / 2.55 μm)
|
Hamamatsu Corporation
|
| LN152 |
Infrared Light Emitting Diodes
|
Matsshita / Panasonic
|
| LN58 |
Infrared Light Emitting Diodes
|
Matsshita / Panasonic
|
| SMTIR9901 |
(SMTIR9901 / SMTIR9902) Infrared Sensors
|
Samtec
|
