| PART |
Description |
Maker |
| ZVA-213 |
Wideband Amplifier 50楼? 800 MHz to 21 GHz
Wideband Amplifier 50惟 800 MHz to 21 GHz
Wideband Amplifier 50Ω 800 MHz to 21 GHz
|
Mini-Circuits
|
| RFVC1800 RFVC1800PCK-410 RFVC1800S2 |
WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz
|
http://
RF Micro Devices
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦，1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PH1214-25M |
Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty
Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150mS Pulse, 10% Duty 雷达脉冲功率晶体 25瓦特.20-1.40千兆赫，150毫秒脉冲0％的
|
Vishay Intertechnology, Inc.
MACOM[Tyco Electronics]
|
| TGA4832 |
DC - 35 GHz Wideband Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| TGA4832-15 |
DC 35 GHz Wideband Amplifier
|
TriQuint Semiconductor
|
| PH1113-100 |
Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty 雷达脉冲功率晶体 100瓦，11日至1月三日千兆赫，为3ms脉冲0％的关税
|
MACOM[Tyco Electronics]
|
| HMC334LP4 HMC334LP4E |
SiGe WIDEBAND DOWNCONVERTER, 0.8 - 2.7 GHz
|
Hittite Microwave Corporation
|
| BFQ621 |
NPN 7 GHz wideband transistor
|
NXP Semiconductors N.V.
|
| BFG741 |
NPN 7 GHz WIDEBAND TRANSISTOR
|
List of Unclassifed Manufacturers
ETC
|
| BFR94A |
NPN 3.5 GHz wideband transistor
|
Philips Semiconductors
|
