PART |
Description |
Maker |
UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
PTB20188 |
4 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor
|
ERICSSON[Ericsson]
|
MRF377R5 MRF377R3 MRF377 |
MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
PTB20011 |
20 Watts P-Sync, 47060 MHz UHF TV Linear Power Transistor 20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor 20 Watts P-Sync 470-860 MHz UHF TV Linear Power Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
BGD814 BGD81401 |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors Philips
|
M68732SHA 68732SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-520 MHz 6.7W FM PORTABLE SILICON MOS FET POWER AMPLIFIER, 470-520MHz, 6.7W, FM PORTABLE SILICON MOS FET POWER AMPLIFIER, 470-520MHZ 6.7W FM PORTABLE From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
PTB20004 |
50 Watts, 860-900 MHz Cellular Radio RF Power Transistor 50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
SX1272 SX1273 |
860-1050 MHz Ultra Low Power Long Range Transceiver
|
Semtech Corporation
|
2SC3218-M |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE
|
NEC Corp.
|