| PART |
Description |
Maker |
| RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| SZM-2066Z SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EV |
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
|
RF Micro Devices
|
| EIA1011-4P |
10.7-11.7GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| RF5602 |
3GHz To 2.7GHz Linear Power Amplifier
|
RF Micro Devices
|
| EIA1819-1P EIB1819-1P |
18.7-19.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| TIM7785-4UL09 |
HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM3742-12UL09 |
HIGH POWER P1dB=41.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| LT5570 LT5570IDD-PBF LT5570IDD-TRPBF |
Fast Responding, 40MHz to 2.7GHz Mean-Squared Power Detector
|
Linear Technology
|
| LTC5532 |
300MHz to 7GHz Precision RF Power Detector with Gain and Offset Adjustment
|
Linear
|
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
