| PART |
Description |
Maker |
| MBM29DL323BE90PBT MBM29DL323BE90TN MBM29DL323BE90T |
2M X 16 FLASH 2.7V PROM, 120 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 80 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
TVS UNIDIRECT 600W 51V SMB 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
MICRO SINGLE MODE FIBER TRANCEIVER, ST 32M的（4米8/2M × 16）位双操
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
32M (4M x 8/2M x 16) BIT Dual Operation 32M的（4米8/2M × 16）位双操
KPT 6C 6#20 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 PORT MODULAR SWITCH ROHS VERSION
LE1416A BLANK FACE PLATE
4 PORT 100 MB SINGLE-MODEFIBER
XSNT SUPPR,ESD,060.00V,0603
MULTI-WAY IEC PANEL OUTLET
8 PORT MODULAR SWITCH
PCI 10BASE T/10 BASE FL NIC, S
TVS UNI-DIR 43V 600W SMB
|
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| W25Q32BV W25Q32BVSSAG W25Q32BVDAAP W25Q32BVZPAP W2 |
3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
32M X 1 SPI BUS SERIAL EEPROM, PDSO16
|
WINBOND ELECTRONICS CORP
|
| IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| W25X16AVSNIG W25X16AVSSIG W25X16ALSFIG W25X16AVSFI |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
http://
|
| IBM13M32734BCD |
32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2组寄缓冲同步动态RAM模块) 32M × 72配置2，银行注缓冲内存模组2M × 72配置2组寄缓冲同步动态内存模块）
|
IBM Microeletronics
International Business Machines, Corp.
|
| W25Q32DW W25Q32DWSFIG W25Q32DWSFIP W25Q32DWSSIG W2 |
1.8V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
| HYE18P32161AC HYE18P32161ACL70 HYE18P32161ACL85 HY |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04
32M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| KM23C32101C |
32M-Bit (4Mx8) CMOS MASK ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory
32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
| A29DL323 A29DL323TG-90 A29DL323TV-90 A29DL323UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
AMICC[AMIC Technology]
|
| HYS64V16300GU HYS72V16300GU HYS64V32220GU HYS72V32 |
3.3 V 16M × 64-Bit 1 Bank SDRAM Module(3.3 V 16M × 64-1同步动态RAM模块)
3.3 V 16M × 72-Bit 1 Bank SDRAM Module(3.3 V 16M × 72-1同步动态RAM模块)
3.3 V 32M × 64-Bit 1 Bank SDRAM Module(3.3 V 32M × 64-1同步动态RAM模块)
3.3 V 32M × 72-Bit 1 Bank SDRAM Module(3.3 V 32M × 72-1同步动态RAM模块)
32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
