| PART |
Description |
Maker |
| KM432D2131 |
512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM
|
Samsung Semiconductor
|
| HY5V22GF HY5V22GF-H HY5V22GF-P |
4 Banks x 1M x 32Bit Synchronous DRAM
|
Hynix Semiconductor
|
| K4M563233G K4M563233G-FN_G60 K4M563233G-FL_F60 K4M |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
| K4S563233F K4S563233FHN K4S563233FHN75 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S283234F-M |
1M x 32Bit x 4 Banks SDRAM in 90FBGA Data Sheet
|
Samsung Electronic
|
| KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-10 |
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
|
Samsung semiconductor
|
| MT48LC1M16A1 |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM（工业温度）)
|
Micron Technology, Inc.
|
| T436432B-7S T436432B-7SG T436432B-55SG T436432B-6S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM 200万32内存12k × 32 x 4Banks同步DRAM
|
TM Technology, Inc.
|
| HY5V22F-55 HY57V283220T-6 HY57V283220T-55 HY57V283 |
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM)
512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|
| DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
