| PART |
Description |
Maker |
| EDE5104ABSE EDE5104ABSE-5C-E EDE5108ABSE-5C-E EDE5 |
(EDE51xxABSE) 512M bits DDR2 SDRAM
512M bits DDR2 SDRAM 64M X 8 DDR DRAM, 0.5 ns, PBGA64
512M bits DDR2 SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA64
|
Elpida Memory, Inc.
|
| EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存
512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
| EDE5108AHSE-4A-E EDE5116AHSE-4A-E EDE5108AHSE-5C-E |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| EDE5108AESK-6E-E EDE5104AESK EDE5104AESK-4A-E EDE5 |
512M bits DDR2 SDRAM
|
ELPIDA[Elpida Memory]
|
| EDD5116AFTA-7B-E EDD5108AFTA EDD5108AFTA-6B-E EDD5 |
512M bits DDR SDRAM
|
ELPIDA[Elpida Memory]
|
| EDJ5304BASE-DG-E EDJ5316BASE-8A-E EDJ5316BASE-8C-E |
512M bits DDR3 SDRAM
|
Elpida Memory
|
| EDE5104AGSE1 |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| EDS5108ABTA-6B EDS5108ABTA-7A |
512M bits SDRAM 64M X 8 SYNCHRONOUS DRAM, 5 ns, PDSO54
512M bits SDRAM 64M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Elpida Memory, Inc.
|
| EDD5108ADTA-6BTI EDD5116ADTA-6BTI EDD5116ADTA-7ATI |
512M bits DDR SDRAM WTR (Wide Temperature Range)
|
Elpida Memory
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
