| PART |
Description |
Maker |
| HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S |
3.3V 72-mc CPLD 14A 600V UFS Series N-Channel IGBTs 14A, 600V, UFS Series N-Channel IGBTs 14A/ 600V/ UFS Series N-Channel IGBTs
|
Fairchild Semiconductor Corporation HARRIS[Harris Corporation] FAIRCHILD[Fairchild Semiconductor]
|
| FAP-450 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 500V五(巴西)直|4A条(丁)|47VAR N-channel MOS-FET(500V, 0,38Ω, 14A, 190W) N-channel MOS-FET(500V, 0,38楼?, 14A, 190W)
|
TOKO, Inc. Fuji Electric
|
| STGB14NC60KDT4 STGP14NC60KD STGF14NC60KD STGB14NC6 |
N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGB14NC60KD06 STGP14NC60KD GB14NC60KD GF14NC60KD |
N-channel 14A - 600V - TO-220 - TO-220FP - D2PAK Short circuit rated PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| HGT1S14N37G3VLS HGTP14N37G3VL |
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs)
|
Intersil Corporation
|
| IRGBC30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| APT14F100B APT14F100S |
N-Channel FREDFET 1000V, 14A, 1.00Ω Max, trr ?40ns N-Channel FREDFET 1000V, 14A, 1.00ヘ Max, trr ÷240ns
|
Microsemi Corporation
|
| BUZ71 |
14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFET RP30 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; 4:1 Wide Input Voltage Range; 30 Watts 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT From old datasheet system 600V/ SMPS Series N-Channel IGBT 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB 600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
INTERSIL[Intersil Corporation] Intersil, Corp. Fairchild Semiconductor, Corp.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|