| PART |
Description |
Maker |
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| ZGP323HEP2032C ZGP323HSP4032C ZGP323HEH4832C ZGP32 |
IC Z8 GP MCU 32K OTP 20DIP 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDIP20
IC Z8 GP MCU 32K OTP 40DIP 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDIP40
IC Z8 GP MCU 32K OTP 48SSOP 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDSO48
IC Z8 GP MCU 32K OTP 28SOIC 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDSO28
IC Z8 GP MCU 32K OTP 28SSOP 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDSO28
|
ZiLOG, Inc.
|
| MCM6706CR MCM6706CRJ5 MCM6706CRJ5.5 MCM6706CRJ5.5R |
32K x 8 Bit Static Random Access Memory 32K X 8 STANDARD SRAM, 5.5 ns, PDSO32
|
HIROSE ELECTRIC Co., Ltd.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| IDT71V65702 IDT71V65702S75BG8 IDT71V65702S80BG8 ID |
3.3V 256K x 36 ZBT Synchronous 2.5V I/O Flowthrough SRAM
3.3V 512K x 18 ZBT Synchronous 2.5V I/O Flowthrough SRAM
|
IDT
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| PI3B16861 |
Digital Switch | 3.3V 20-Bit Bus Switch (Flowthrough Pinout)
|
|
| 24LC32AX 24AA32A 24LC32AT-I_SM 24LC32AT-I_SMG 24LC |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I<SUP>2</SUP>C™ compatible 2-wire serial ...
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r
32K I2C Serial EEPROM
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial ...
32KIC Serial EEPROM
32K 1.8V I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
| 28C256TRPFB-15 28C256TRT4FB-15 28C256TRT4FB-12 28C |
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 120 ns, DFP28
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 150 ns, DFP28
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 150 ns, DIP28
256K EEPROM (32K x 8-Bit) EEPROM 32K X 8 EEPROM 5V, 120 ns, DIP28
|
Maxwell Technologies, Inc
|
| CAT24WC32XE-1.8TE13D CAT24WC64GWATE13B CAT24WC32PE |
32K/64K-Bit I2C Serial CMOS EEPROM 32K/64K-Bit I2C串行CMOS EEPROM
|
TE Connectivity, Ltd.
Glenair, Inc.
Austin Semiconductor, Inc
Micron Technology, Inc.
M.S. Kennedy, Corp.
AND Displays / Purdy Electronics
|
| CAT24WC33PE-1.8TE13B CAT24WC33XA-1.8TE13D CAT24WC3 |
32K/64K-Bit I2C Serial CMOS EEPROM 32K/64K-Bit I2C串行CMOS EEPROM
|
Cypress Semiconductor Corp.
TDK, Corp.
Panasonic, Corp.
Air Cost Control
|
| M5M5256DFP-70VLL-I M5M5256DFP-70VXL-I M5M5256DFP-8 |
32K X 8 STANDARD SRAM, 85 ns, PDSO28 8 X 13.40 MM, TSOP-28
32K X 8 STANDARD SRAM, 85 ns, PDSO28 0.450 INCH, SOP-28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
From old datasheet system
|
Maxim Integrated Products, Inc.
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位）
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位）
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
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