| PART |
Description |
Maker |
| K6T0808C1D K6T0808C1D-B K6T0808C1D-DB55 K6T0808C1D |
32Kx8 bit Low Power CMOS Static RAM
|
Samsung semiconductor
|
| 24LC256TE/ST14 24LC256TE/SN 24AA256I/ST14 24AA256T |
Nonvolatile, 32-Position Digital Potentiometer
SERIAL EEPROM|32KX8|CMOS|TSSOP|14PIN|PLASTIC
Two/Four-Channel, I2C Adjustable Current DAC
SERIAL EEPROM|32KX8|CMOS|SOP|8PIN|PLASTIC
SERIAL EEPROM|32KX8|CMOS|DIP|8PIN|PLASTIC
Electronically Programmable Voltage Reference
SERIAL EEPROM|32KX8|CMOS|LLCC|8PIN|PLASTIC 串行EEPROM的| 32KX8 |的CMOS | LLCC | 8引脚|塑料
SERIAL EEPROM|32KX8|CMOS|TSSOP|8PIN|PLASTIC 串行EEPROM的| 32KX8 |的CMOS | TSSOP封装| 8引脚|塑料
|
Microchip Technology, Inc.
|
| MX27L256TC-20 MX27L256TI-20 MX27L256TI-25 MX27L256 |
256K-BIT [32Kx8] LOW VOLTAGE OPERATION CMOS EPROM
|
Macronix International Co., Ltd.
|
| BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
EEPROM (4kx8) 32K 2.5-6.0
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (1024x8) 8K
EEPROM 256K X 8 200ns
EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C
EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
EEPROM 128K X 8 150ns
EEPROM (8kx8) 64K 1.8-6.0
EEPROM (2048x8)(1024x16)16K
EEPROM U 804-29EE0107CWH
EEPROM 64K X 8 70ns
EEPROM (256x8) 2K 2.5-6.0
EEPROM (8kx8) 64K 2.5-6.0
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP
EEPROM (384x8) 128k 16
EEPROM SPI 1KBIT
EEPROM SPI 4096X8 BIT
EEPROM SRL 64X16 BIT
EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
EEPROM 2kb 1.7-5.5V Ind I2C
EEPROM 512K-Bit CMOS PARA EEPROM
EEPROM (32kx8) 256K 3V 250
EEPROM 64K X 8 512K 5V 150
EEPROM 256K (32KX8)
|
Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
BCD Semiconductor Manufacturing, Ltd.
Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
|
| KM68V257E-15 KM68V257E-20 KM68V257EI-15 KM68V257EI |
32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)
|
Samsung semiconductor
|
| K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C- |
32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EM033C08 EM033C08T EM033C08N |
Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package 低功2Kx8 SRAM的引脚兼容的32引脚封装光盘
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| ES62UL256-45TC ES62UL256 ES62UL256-25SC ES62UL256- |
REED RELAY 32Kx8位超低功耗异步静态RAM
Dry Reed Relay; Relay Terminals:Thru Hole 32Kx8位超低功耗异步静态RAM
32Kx8 Bit Ultra-Low Power Asynchronous Static RAM
|
Electronic Theatre Controls, Inc.
NanoAmp Solutions, Inc.
ETC[ETC]
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TMP87C409BN TMP87C409BM 87C809 TMP87C809BN TMP87C8 |
(TMP87Cx09xx) CMOS 8-bit Microcontroller
Low Voltage, Low Power, 16-/24-Bit, Dual Sigma Delta ADC; Package: EVALUATION BOARDS; No of Pins: -; Temperature Range: TBD
|
Toshiba Semiconductor
Toshiba Corporation
|
| BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
