| PART |
Description |
Maker |
| BT138-600 BT138-600F BT138-600G BT138-500/B BT138- |
TRIAC 12A SOT-186A
TRIAC 12A/600V
TRIAC 12A/500V
Triacs
|
Philips Semiconductors
|
| HGTG12N60D1 HGTG12N60D1D |
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
| RJH60D2DPP-M0-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| 12FR120 12FR120M A12FR120 A12FR120M 12FR100 12FR10 |
STANDARD RECOVERY DIODES
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Green/Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1015, CSA Type TEW, JQA-F-, Passes VW-1 Flame Test RoHS Compliant: Yes 标准恢复二极
STANDARD RECOVERY DIODES 标准恢复二极
CAPACITOR 8200UF 25V ELEC TSHA
WIRE 18AWG WHITE UL 1015 600V
UL STYLE 1015, CSA TYPE TEW, 600V, 105C, GREEN W. YELLOW
WIRE, UL1015, 18AWG (16X30G), 600V, RED
100V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
800V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| AOTF12N60FD |
600V, 12A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| AOTF9610 AOT9610 AOTF12N60 AOT12N60 |
600V, 12A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| 12N60G-T2Q-T 12N60L-T2Q-T 12N60G-TA3-T 12N60G-TF1- |
12A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| HGTP2N120BND |
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Fairchild Semiconductor
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2SB922L 2SD1238L 2SD1238LR 2SB922LS |
Dual/Triple-Voltage µP Supervisory Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 12A I(C)
80V/12A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| BCR12PM-12LDB00 BCR12PM-12LDA8B00 BCR12PM-12LD-15 |
600V - 12A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
