PART |
Description |
Maker |
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
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Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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AT28C010 AT28C010-12 AT28C010-12DM_883 AT28C010-15 |
1 Megabit 128K x 8 Paged CMOS E2PROM 1 Megabit (128K x 8) From old datasheet system
|
ATMEL[ATMEL Corporation]
|
AT28C010-12JC AT28C010-12JI AT28C010-12PC AT28C010 |
From old datasheet system 1 Megabit (128K x 8) 1 Megabit 128K x 8 Paged CMOS E2PROM
|
ATMEL Corporation
|
28LV010RT4FS25 28LV010 28LV010RPDB20 28LV010RPDB-2 |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
|
MAXWELL[Maxwell Technologies]
|
EN29F010 EN29F010-70JCP EN29F010-90JIP EN29F010-55 |
1 Megabit (128K x 8-bit) 5V Flash Memory
|
ETC Eon Silicon Solution Inc.
|
29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
AM27X2048 AM27X2048-120JC AM27X2048-120JI AM27X204 |
2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device 128K X 16 MASK PROM, 70 ns, PQCC44 2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device 128K X 16 MASK PROM, 90 ns, PQCC44 2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device 128K X 16 MASK PROM, 90 ns, PDIP40 2 Megabit (128 K x 16-Bit) CMOS ExpressROM Device 128K X 16 MASK PROM, 70 ns, PDIP40
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ADVANCED MICRO DEVICES INC PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
PDM31034SA10SO PDM31034SA10SOATY PDM31034SA10SOATR |
1 megabit 3.3V static RAM 128K x 8-bit revolutionary pinout
|
PARADIGM
|
EN29LV010-70TI EN29LV010-70TC EN29LV010-90SC EN29L |
1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
|
Eon Silicon Solution Inc. Eon Silicon Solution In...
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AM75DL9608HGT70IT AM75DL9608HGT75IS AM75DL9608HGT7 |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 64兆位个M x 16位)2兆位米16位).0伏的CMOS只,同时作业闪存,和 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc. Xilinx, Inc. Spansion, Inc.
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AM29F100-1 AM29F100B-120DGC AM29F100B-120DGC1 AM29 |
1 megabit CMOS 5.0 volt-only, boot sector flash memory 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1 Hex Inverters 14-VQFN -40 to 85 1兆位28x 8-Bit/64x 16位).0伏的CMOS只,引导扇区快闪记忆体模修订1 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC47 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 1兆位28亩x 8-Bit/64亩x 16位).0伏的CMOS只,引导扇区快闪记忆体模修订1 Hex Inverters 14-TSSOP -40 to 85 1兆位28亩x 8-Bit/64亩x 16位).0伏的CMOS只,引导扇区快闪记忆体模修订1
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AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. PROM ADVANCED MICRO DEVICES INC
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AM29LV200B AM29LV200BB-120EC AM29LV200BB-120ECB AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存
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http:// AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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