| PART |
Description |
Maker |
| VG3617801BT-8H |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor Corporation
|
| VG3617161ET-8 VG3617161ET-7 |
CMOS Synchronous Dynamic RAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
Vanguard International Semiconductor Corporation
Vanguard International Semiconductor, Corp.
|
| MB8504S064AF-100 MB8504S064AF-84 MB8504S064AF-67 |
CMOS 4M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64同步动态RAM)
CMOS 4M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64同步动态RAM) 4米64位的CMOS同步动态随机存取存储器（SDRAM）的CMOS分64位同步动态RAM）的
|
Fujitsu Limited
Fujitsu, Ltd.
|
| MB81117422A-125 |
CMOS 2×2M ×4 Bit
Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步动态RAM)
|
Fujitsu Limited
|
| VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161E |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG36646141BT-8 |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| VG37648041AT |
256M:x4, x8, x16 CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 |
16M SDRAM
16Mb Synchronous DRAM
|
Hynix Semiconductor
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
