| PART |
Description |
Maker |
| UPG2179TB UPG2179TB-E4-A |
NECs 1.5W L, S-BAND SPDT SWITCH
NECs 1.5W L/ S-BAND SPDT SWITCH
|
NEC Corp.
NEC[NEC]
|
| UPG2012TK UPG2012TK-E2 |
NECs W SINGLE CONTROL L, S-BAND SPDT SWITCH
NECs ? W SINGLE CONTROL L, S-BAND SPDT SWITCH
|
NEC[NEC]
|
| UPD5710TK UPD5710TK-E2-A |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCH
|
NEC Corp.
NEC[NEC]
|
| UPG2022T5G-E1-A |
NECs 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH
|
Electronic Theatre Controls, Inc.
California Eastern Laboratories
|
| UPG2030TK UPG2030TK-E2-A |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING 邻舍1瓦超小型单刀双掷开
NECs 1 W ULTRA SMALL SPDT SWITCH
|
NEC, Corp.
NEC[NEC]
|
| NE5511279A NE5511279A-T1A NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET 邻舍7.5 V UHF频段射频功率硅劳工处场效应晶体管
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NE5520379A-T1A-A NE5520379A |
NECS 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Labs
|
| NE5520279A-T1 NE5520279A |
NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
NEC Corp.
NEC[NEC]
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| UPG2179TB1 UPG2179TB-E4 UPG2179TB |
L, S-BAND SPDT SWITCH
|
NEC
|
| UPG168TB-E4 UPG168TB |
L, S-BAND SPDT SWITCH
|
CEL[California Eastern Labs]
|
| UPG2158T5K-E2-A |
L,S-BAND SPDT SWITCH
|
California Eastern Labs
|
