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LH28F400BVHE-BL85 - 4M Flash Memory

LH28F400BVHE-BL85_55686.PDF Datasheet


 Full text search : 4M Flash Memory
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Atmel Corp.
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Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
AM41DL16X4D AM41DL1614DT70IS SPANSIONLLC-AM41DL162 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
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ADVANCED MICRO DEVICES INC
SPANSION LLC
Advanced Micro Devices, Inc.
HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
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122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
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150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
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Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
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UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 8K X 8 STANDARD SRAM, 55 ns, CDFP28
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4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory
64 Mb (4M x 16) Boot Sector, Flash Memory
SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
Maxim Integrated Products, Inc.
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CATALYST[Catalyst Semiconductor]
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SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
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AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
 
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