| PART |
Description |
Maker |
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS62WV12816BLL-45B IS62WV12816BLL-45B2 IS62WV12816 |
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62WV25616DALL/DBLL IS65WV25616DBLL |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| IS62WV51216ALL IS62WV51216BLL |
(IS62WV51216A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| IS62WV2568BLL IS62WV2568BLL-55BI IS62WV2568BLL-55B |
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62VV25616LL-85M IS62VV25616LL-85MI IS62VV25616LL |
256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS62WV5128CLL |
512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| IS62WV10248BLL-70BI IS62WV10248BLL-55BLI IS62WV102 |
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| BS62UV2001TI BS62UV2001 BS62UV2001SC BS62UV2001SI |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV402 |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
