| PART |
Description |
Maker |
| SMBD2835 SMBD2836 Q68000-A8436 Q68000-A8547 |
Silicon Switching Diode Array 0.25 A, 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
Silicon Switching Diode Array with co...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Q62702-A3466 BAS28W BAS28WQ62702A3466 |
PSoC® Mixed-Signal Array
Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) 2 ELEMENT, SILICON, SIGNAL DIODE
PSoC® Mixed-Signal Array
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| CMEDA-6I |
SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY 0.25 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
|
| SMBD7000 SMBD700007 MMBD7000 |
Silicon Switching Diode Array For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| BAW100 Q62702-A376 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)
|
Siemens Group
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| S8-4150E3 S8-4148E3 S8-4150 S8-4148 S8-4150TR S8-4 |
UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
Switching Diode Array
|
MICROSEMI CORP-SCOTTSDALE
Microsemi Corporation
|
| NSDEMP11XV6T1 NSDEMP11XV6T5 |
Common Anode Quad Array Switching Diode 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
ONSEMI[ON Semiconductor]
|
| BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SMBD7000 |
From old datasheet system
Silicon Switching Diode Array
|
Siemens Semiconductor Group
|
| BAW56S |
Silicon Switching Diode Array(硅开关二极管阵列，高速开关应
|
SIEMENS AG
|
| BAW56W Q62702-A1031 |
Silicon Switching Diode Array (For high speed switching applications Common anode)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Siemens Group
Siemens Semiconductor Group
Infineon
|
