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MSC23836B - SSR AS 600V 25A 0-10V 8,388,608 Word By 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE 83886086位动态RAM模块:快速页面模式型

MSC23836B_46829.PDF Datasheet


 Full text search : SSR AS 600V 25A 0-10V 8,388,608 Word By 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE 83886086位动态RAM模块:快速页面模式型
 Product Description search : SSR AS 600V 25A 0-10V 8,388,608 Word By 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE 83886086位动态RAM模块:快速页面模式型


 Related Part Number
PART Description Maker
MSC23837A MSC23837A-XXBS18 MSC23837A-XXDS18 8388608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE
8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE
SSR AS 480V 25A 0-10V 8388608字36位DRAM模块:快速页面模式型
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
IRG4PC40K 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
IRF[International Rectifier]
MSC23832D MSC23832D-XXBS16 MSC23832D-XXDS16 8,388,608-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
From old datasheet system
SSR AS 480V 100A 0-10V 8388608字32位动态随机存储器模块:快速页面模式型
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
25FR120 25FR120M A25FR120 A25FR120M 25FR100 25FR10 100V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
From old datasheet system
800V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
STANDARDRECOVERYDIODES
400V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1200V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
标准恢复二极
   STANDARD RECOVERY DIODES
IRF[International Rectifier]
InternationalRectifier
FB514 FB612 FB614 FB522 FB524 FB523 THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|25A I(T) 晶闸管模块|桥|半CNTLD |消委会| 1.2KV五(无线资源管理)|5A我(翻译
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|800V V(RRM)|25A I(T)
Square D by Schneider Electric
BTA24-600BW TRIAC,600V V(DRM),25A I(T)RMS,TO-220AB
ST
IRG4BC40K Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
International Rectifier, Corp.
IRF[International Rectifier]
APT10040B2VFR APT10040LVFR POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
RELAY SSR SPST 280VAC 10A DIN MT
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五(DRM)的| 300口(T)的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五(DRM)的| 150A口(T)的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五(DRM)的| 150A口(T)的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五(DRM)的| 300口(T)的有效值|培训基金,一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五(DRM)的|0A口(T)的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五(DRM)的| 150A口(T)的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五(DRM)的| 50A条口(T)的有效值|08VARM8
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
FCB36N60N FCB36N60NTM N-Channel SupreMOSMOSFET 600V, 25A, 125m
N-Channel SupreMOS? MOSFET 600 V, 36 A, 90 mΩ
Fairchild Semiconductor
MIT-5A117 ISOLATOR, FLUSH 25A 3 POLEISOLATOR, FLUSH 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:2.2kW; Switch function type:Triple Pole 开槽光电断路器
SLOTTED PHOTOINTERRUPTER
Unity Opto Technology Co., Ltd.
 
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