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IRFP250N -    Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET(减振钢板基本\u003d 200第五的Rdson)\u003d 0.075ohm,身份证\u003d 30A条)

IRFP250N_45025.PDF Datasheet

 
Part No. IRFP250N IRFP250
Description    Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET(减振钢板基本\u003d 200第五的Rdson)\u003d 0.075ohm,身份证\u003d 30A条)

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Maker


IRF[International Rectifier]
International Rectifier, Corp.



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Part: IRFP250N
Maker: IR
Pack: TO-247
Stock: 7131
Unit price for :
    50: $0.83
  100: $0.79
1000: $0.75

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 Full text search :    Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET(减振钢板基本\u003d 200第五的Rdson)\u003d 0.075ohm,身份证\u003d 30A条)
 Product Description search :    Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET(减振钢板基本\u003d 200第五的Rdson)\u003d 0.075ohm,身份证\u003d 30A条)


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