| PART |
Description |
Maker |
| 24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM From old datasheet system CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
| W27C520S-70 W27C520W-70 W27C520S-90 W27C520W-90 |
64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics
|
| IS25C64A |
(IS25C32A / IS25C64A) 32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| W27C512-45 W27C512P-12 W27C512P-45 W27C512P-70 W27 |
FAN 24 DC MUFFIN MC24H3 64K X 8 EEPROM 12V, 90 ns, PDIP28 Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes 64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
| 27C4096 W27C4096 W27C4096-12 W27C4096P-15 W27C4096 |
256K X 16 ELECTRICALLY ERASABLE EPROM 256K ′ 16 ELECTRICALLY ERASABLE EPROM From old datasheet system
|
Winbond Electronics WINBOND[Winbond]
|
| BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM 128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR |
512】8 bit electrically erasable PROM 5128 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L08-W BR24L08F-W BR24L08FJ-W BR24L08FV-W BR24L |
1024×8 bit electrically erasable PROM 1024 bit electrically erasable PROM 1024位电可擦除可编程ROM
|
Rohm Co., Ltd. Rohm CO.,LTD.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| PALCE29M16H-35PC PALCE29M16H-35DC |
Electrically-Erasable PLD
|
|
| W27C010 |
128K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond
|