| PART |
Description |
Maker |
| K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280432D-TC/L1H K4S280432D-TC/L1L K4S280432D-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TH58V128FT |
128Mbit (16M x 8bit) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| V54C3128164VBGA V54C3128804VBGA V54C3128 V54C31284 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns
128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| KM44S32030BT-G_FA KM44S32030BT-G_FH KM44S32030BT-G |
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| W986408CH-8H W986408CH-75 W986408CH |
2M x 8BIT x 4 BANKS SDRAM
x8 SDRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http://
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| K4D263238G-GC |
128Mbit GDDR SDRAM
|
Samsung Electronic
|
| V54C3128 |
128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic, Corp.
|
| K4S280432D-TC_L1L K4S280432D-TC_L1H K4S280432D-TC_ |
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
Samsung semiconductor
|
| K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
