| PART |
Description |
Maker |
| K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位（8Mx8 / 4Mx16）的CMOS掩膜ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K3P7U1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung semiconductor
|
| TC58FVT641XB-70 TC58FVB641XB-70 TC58FVB641FT-70 TC |
CAT5E PATCH CORD 15 FOOT BLACK
64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| V53C365805A |
3.3 Volt 8M X 8 EDO Page Mode CMOS Dynamic RAM(3.3V 8Mx8 EDO页面模式CMOS动态RAM)
|
Mosel Vitelic, Corp.
|
| K3N7VU4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| AP65111AWU-7 |
LIGHT LOAD IMPROVED 1.5A SYNCH DC/DC BUCK CONVERTER
|
Diodes Incorporated
|
| KMM372F803BS KMM372F883BK KMM372F883BS KMM372F803B |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EMC646SP16JV-12L EMC646SP16JV-12LF EMC646SP16JV-12 |
4Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
|
| HY5DV641622AT-4 HY5DV641622AT-33 HY5DV641622AT-36 |
64M(4Mx16) DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| HSD8M64D8H-10 HSD8M64D8H-10L HSD8M64D8H-13 HSD8M64 |
Synchronous DRAM Module 64Mbyte (8Mx64bit), DIMM based on 8Mx8,4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
