| PART |
Description |
Maker |
| KM23V64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
|
ALSC[Alliance Semiconductor Corporation]
ETC
|
| AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-8TC AS |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Alliance Semiconductor, Corp.
|
| KMM372C883CS KMM372C803CK KMM372C883CK KMM372C803C |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372V883BS KMM372V803BK KMM372V803BS KMM372V883B |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM5328004BSWG KMM5328004BSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5328004CSWG KMM5328004CSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| K5P6480YCM-T085 |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
|
Samsung Electronic
|
| KMM372F804BS |
8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| HSD8M64D8H-10 HSD8M64D8H-10L HSD8M64D8H-13 HSD8M64 |
Synchronous DRAM Module 64Mbyte (8Mx64bit), DIMM based on 8Mx8,4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
