| PART |
Description |
Maker |
| APT8030LVR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8030B2VR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT4016BVR |
POWER MOS V 400V 27A 0.160 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT8056BVFR |
POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8020B2FLL APT8020LFLL |
POWER MOS 7 800V 38A 0.200 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT8020JFLL |
POWER MOS 7 800V 33A 0.200 Ohm
|
Advanced Power Technology
|
| APT8030JNFR |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 27A I(D)
|
|
| APT8018JN |
POWER MOS IV 800V 40A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| FSYA250R FSYA250D FSYA250R1 FN4313 FSYA250R4 FSYA2 |
27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 27 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
