| PART |
Description |
Maker |
| TC554161AFT-10 TC554161AFT-10L TC554161AFT-70 TC55 |
KEYING PLUG,FOR SKTS 262,144字由16位静态RAM
262,144-WORD BY 16-BIT STATIC RAM 262,144字由16位静态RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-1 |
From old datasheet system
262144-BIT CMOS STATIC RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词？8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| UPD424260A UPD424260L UPD42S4260A UPD42S4260L |
262144 x 16-Bit DRAM
|
NEC Electronics
|
| MB81257-80 |
MOS 262144 Bit DRAM
|
Fujitsu
|
| IS28F020 |
262144 x 8 CMOS Flash Memory
|
Integrated Silicon Solution
|
| MSM532001B |
262144 word x 8-Bit Mask ROM
|
OKI Semiconductor
|
| TC528267 |
262144 Words x 8 Bits Multiport DRAM
|
Toshiba
|
| M66287FP |
262144-word x 8-bit x 3-FIELD MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| GM71C4256B |
262144 word x 4 Bit CMOS DRAM
|
LG
|
| M5M4V16G50DFP-12 M5M4V16G50DFP-10 |
16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
|
Mitsubishi Electric Corporation
|
| 2CTA-K |
KEYING PLUG
|
Adam Technologies, Inc.
|
