| PART |
Description |
Maker |
| AT49LD3200-20TC AT49LD3200-13TI AT49LD3200-10TI AT |
x16/x32 Flash EEPROM x16/x32闪存EEPROM
|
Atmel, Corp.
Electronic Theatre Controls, Inc.
|
| M58LV064A150N1T |
64 Mbit 4Mb x16 or 2Mb x32 / Uniform Block / Burst 3V Supply Flash Memories
|
ST Microelectronics
|
| M58LV064A150ZA1T M58LV064A150ZA6T M58LV064B150N1T |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories 64兆位4Mb的x16或功能的2Mb X32号，统一座，突发3V电源闪存
|
STMicroelectronics N.V.
|
| H57V2622GMR-60X H57V2622GMR-75X |
256Mb : x32 Dual Die Synchronous DRAM
|
Hynix Semiconductor
http://
|
| GA81032Q-5I GA81032Q-5IT GA81032Q-150 GA81032Q-150 |
x32 Fast Synchronous SRAM X32号，快速同步SRAM
|
Enpirion, Inc.
Citizen Finetech Miyota
|
| GS81132Q4I GS81132Q6I |
x32 Fast Synchronous SRAM X32号，快速同步SRAM
|
Altera, Corp.
|
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| HY57V641620ET-7 HY57V641620ESTP-H HY57V641620ET-H |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| IS61SF25616 IS61SF25616-10B IS61SF25616-10TQI IS61 |
x16 Fast Synchronous SRAM x16快速同步SRAM
x18 Fast Synchronous SRAM
256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
HIROSE ELECTRIC Co., Ltd.
ISSI[Integrated Silicon Solution, Inc]
|
| MT48LC64M4A203 |
SYNCHRONOUS DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| IS45S16800E-6BLA1 IS45S81600E-6TLA1 IS45S81600E-7C |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc
|
| W981616AH-8 W981616AH-7 |
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Winbond Electronics, Corp.
|
