| PART |
Description |
Maker |
| M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
1048576-BIT CMOSSTATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
| TC514400A TC514400AXX |
1048576 Word x 4 Bit DRAM
|
Toshiba
|
| MH1S64CWXTJ-1539 MH1S64CWXTJ-12 MH1S64CWXTJ-15 MH1 |
67108864-BIT (1048576-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M44258-10 M5M44258-7 M5M44258-8 M5M44258BP M5M44 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
| M5M51008KR-10LL-I M5M51008KR-70LL M5M51008KR-55LL |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
From old datasheet system
|
Mitsubishi
|
| M5M51R16AWG-10LI D98010 M5M51R16AWG-15LI M5M51R16A |
From old datasheet system
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MSM56V16800E |
2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
|
| HM621100A |
1048576 word / 1 Bit High Speed CMOS Static RAM
|
Hitachi Semiconductor
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
