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MGP7N60ED - Insulated Gate Bipolar Transistor withr Anti-Parallel Diode IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system

MGP7N60ED_35766.PDF Datasheet


 Full text search : Insulated Gate Bipolar Transistor withr Anti-Parallel Diode IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system
 Product Description search : Insulated Gate Bipolar Transistor withr Anti-Parallel Diode IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system


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