PART |
Description |
Maker |
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
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BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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STR-Y6753 STR-Y6763 STR-Y6754 STR-Y6735 STR-Y6700 |
Power IC for Quasi-Resonant Mode Switching Power Supplies with Low Standby Power
|
Sanken electric
|
2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
FLS2100XS |
The FLS-XS series of general lighting power controllers includes highly integrated power switches for medium - to high-power lumens applications.
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List of Unclassifed Man...
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2SD1267A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1745 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1499 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD2659 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|