| PART |
Description |
Maker |
| IRF7389 IRF7389TR |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| IRF7404TRPBF |
generation v technology
|
International Rectifier
|
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRF7343PBF IRF7343TRPBF |
generation v technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRF9952PBF IRF9952TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| 8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
