PART |
Description |
Maker |
TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM) 8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM) 4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM)的 8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM) SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation Toshiba, Corp.
|
HY5DU283222Q-45 |
DDR Synchronous DRAM DDR同步DRAM
|
TE Connectivity, Ltd.
|
EM6A9160TSA-5G |
8M x 16 DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
EM68B32DVKA EM68B32DVKA-6H EM68B32DVKA-75H |
16M x 32 Mobile DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
EM6AA160TSA EM6AA160TSA-4G EM6AA160TSA-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 512Mb: x4, x8, x16 DDR SDRAM Features 128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
MT46H8M16LFBF-54K MT46H4M32LFB5-5K |
8M X 16 DDR DRAM, 5 ns, PBGA60 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 4M X 32 DDR DRAM, 5 ns, PBGA90
|
NEC, Corp.
|
V59C1512164QDLJ25H V59C1512404QDLJ25AI |
32M X 16 DDR DRAM, PBGA84 128M X 4 DDR DRAM, PBGA60
|
PROMOS TECHNOLOGIES INC
|
K4H1G0438A-UCB30 K4H1G0838A-UCB00 |
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 128M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Cypress Semiconductor, Corp.
|
EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM 256Mb (2MBank2) Synchronous DRAM 256Mb的(200万?4Bank2)同步DRAM 256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
M312L6523BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA |
64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 64M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 26615150 DDR SDRAM的注册模 DDR SDRAM Registered Module
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|