| PART |
Description |
Maker |
| CXA1786N |
1.1GHz-band PLL IC for Mobile Communications
|
Sony Corporation
|
| MGFC39V6472A04 MGFC39V6472A |
6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3742A |
3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC44V6472_97 MGFC44V6472 MGFC44V647297 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V3642_98 MGFC44V3642 MGFC44V364298 |
3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V6472A C456472A |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BFR92W Q62702-F1488 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管（对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关）
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TDA9884TS |
From old datasheet system
I2C-bus controlled multistandard alignment-free IF-PLL for mobile reception
|
Philips Semiconductors
|
| BFP93 BFP93A Q62702-F1144 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-253
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
