| PART |
Description |
Maker |
| 80C186EC 80C188EC 80L186EC 80L188EC 80C186EC20 80C |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS 16位高集成嵌入式处理器
CAPACITOR 4700UF 16V CAPACITOR 4700UF 16V; CAPACITANCE:4700UF; VOLTAGE RATING, DC:16V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:ZLH; TEMP, OP. MAX:105(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes
|
Intel Corp.
Intel, Corp.
|
| D1217UK D1217 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-12.5V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| D1203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(30W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应30W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| SLD302V-24 SLD302V-21 SLD302V-3 SLD302V-25 |
200mW High Power Laser Diode
|
Roithner LaserTechnik GmbH
Roithner LaserTechnik G...
|
| 1SS355 1SS355-L0RRG 1SS355-B0RRG 1SS355RRG 1SS355- |
200mW High Speed SMD Switching Diode
|
Taiwan Semiconductor Co...
|
| SLD302B |
Block-type 200mW High Power Laser Diode
|
Sony Corporation
|
| MRF587 MRF587-15 |
The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| D1022UK D1022 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| MP1498 MP1498DJ |
High-Efficiency, 2A, 16V, 1.4MHz Synchronous, Step-Down Converter
|
Monolithic Power Systems
|
| MP1474SGJ |
High-Efficiency, 2A, 16V, 500kHz Synchronous, Step-Down Converter
|
Monolithic Power System...
|
