| PART |
Description |
Maker |
| AD7811 AD7811YN AD7811YR AD7811YRU AD7812 AD7812YN |
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs
2.7 V to 5.5 V 350 kSPS 10-Bit 4-/8-Channel Sampling ADCs
|
AD[Analog Devices]
|
| AD976A AD976AAN AD976AAR AD976AARS AD976ABN AD976A |
25V; 700mW; 16-bit, 100kSPS/200kSPS BiCMOS A/D converter
16-Bit/ 100 kSPS/200 kSPS BiCMOS A/D Converters
16-Bit, 100 kSPS/200 kSPS BiCMOS A/D Converters 1-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP28
16-Bit, 200 kSPS, Parallel I/O A/D Converter; Package: SSOP; No of Pins: 28; Temperature Range: Industrial
16-Bit, 200 kSPS, Parallel I/O A/D Converter; Package: SOIC - Wide; No of Pins: 28; Temperature Range: Commercial
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| EVAL-AD7989-5SDZ |
18-Bit, 100 kSPS/500 kSPS PulSAR ADCs in MSOP/LFCSP
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| T7300135 T7300145 T7300155 T7300235 T7300245 T7300 |
Phase Control SCR (350-550 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（350-550安培平均100-2200伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| M57721L 57721L |
350-400MHz 12.5V /7W /FM PORTABLE RADIO
350-400MHz 12.5V,7W,FM PORTABLE RADIO
350-400MHZ, 12.5V, 7W, FM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FT18_TG FT18 FT18_HG FT18_IG FT18_SG FT18/SG FT18/ |
Frame Transfer CCD Image Sensor
GIGABASE 350 CAT5E PATCH 10 FT, NON BOOT, PURPLE
GIGABASE 350 CAT5E PATCH 5 FT, NON BOOT, PURPLE
GIGABASE 350 CAT5E PATCH 15 FT, NON BOOT, PURPLE
GIGABASE 350 CAT5E PATCH 4 FT, NON BOOT, PURPLE
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| M28W320EBB85ZB1T M28W320EBT85N1T M28W320EBB85N1T M |
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 12.7 V; VZ min.: 11.4 V; VZ nom: 12 V
surface mount silicon Zener diodes
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 15.6 V; VZ min.: 13.8 V; VZ nom: 15 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 11.6 V; VZ min.: 10.4 V; VZ nom: 11 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 10.6 V; VZ min.: 9.4 V; VZ nom: 10 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.5 V; VZ min.: 3.1 V; VZ nom: 3.3 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 14.1 V; VZ min.: 12.4 V; VZ nom: 13 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.6 V; VZ min.: 2.2 V; VZ nom: 2.4 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.9 V; VZ min.: 2.5 V; VZ nom: 2.7 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.2 V; VZ min.: 2.8 V; VZ nom: 3 V
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位（处理器x16插槽，引导块V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| AD7910AKS-500RL7 AD7920AKS-500RL7 AD7920AKS-REEL7 |
250 kSPS, 10-/12-Bit ADCs in 6-Lead SC70 250 kSPS的，10-/12-Bit模数转换引脚SC70
250 kSPS, 10-/12-Bit ADCs in 6-Lead SC70 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO6
|
Analog Devices, Inc.
|
| K4H560838F-TC/LA2 K4H560838F-TC/LB3 K4H561638F-TC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-PDIP
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT29BV040A-35CI AT29BV040A-35TU |
512K X 8 FLASH 2.7V PROM, 350 ns, PBGA32
512K X 8 FLASH 2.7V PROM, 350 ns, PDSO32
|
ATMEL CORP
|
| CS556609 CS5566-ISZ CS5566 |
卤2.5 V / 5 V, 5 kSps, 24-bit ?危 ADC
隆戮2.5 V / 5 V, 5 kSps, 24-bit 楼?楼? ADC
|
Cirrus Logic
|
