| PART |
Description |
Maker |
| MT88E39ASR1 |
Calling Number Identification Circuit TELEPHONE CALLING NO IDENT CKT, PDSO16
|
Zarlink Semiconductor, Inc.
|
| MT88E45BS MT88E45BN1 |
4-Wire Calling Number Identification Circuit 2 (4-Wire CNIC2) TELEPHONE CALLING NO IDENT CKT, PDSO20
|
Zarlink Semiconductor, Inc.
|
| MT8841 MT8841AE MT8841AN MT8841AS |
CMOS Calling Number Identification Circuit
|
Mitel Networks Corporat...
MITEL[Mitel Networks Corporation]
|
| MT8843 MT8843AE MT8843AS |
CMOS Calling Number Identification Circuit 2 Preliminary Information
|
Mitel Networks Corporat...
MITEL[Mitel Networks Corporation]
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| GLT44016 GLT44016-25J4 GLT44016-25TC GLT44016-28J4 |
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
etc
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416C12CJ-L5 KM416V12CJ-L5 KM416V10CJ-L5 KM416C10 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out 100万16的CMOS动态随机存储器的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
