| PART |
Description |
Maker |
| MN102H950F |
Microcomputer - 16bit - General Purpose
|
Panasonic
|
| MN102L360C |
Microcomputer - 16bit - General Purpose
From old datasheet system
|
Panasonic
|
| MN102H460B |
Microcomputer - 16bit - General Purpose
From old datasheet system
|
Panasonic
|
| MN102H797 |
Microcomputer - 16bit - General Purpose
From old datasheet system
LQFP064-P-1414(Pb Free)
|
Matsshita / Panasonic
|
| 2SB1709 |
Genera purpose amplification(−12V −1.5A)
Genera purpose amplification(-12V, -1.5A)
|
ROHM[Rohm]
|
| MN102H73K MN102H73G MN102H730F MN102H73 MN102H730 |
Microcomputer - 16bit - General Purpose
With main clock operated 58 ns (at 3.0 V to 3.6 V, 34 MHz)
With main clock operated 58 ns (at 3.0 V to 3.6 V 34 MHz)
|
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
|
| M38047M6-XXXFP M38047M6-XXXHP M38047M6-XXXSP M3804 |
3803/04 Group: General Purpose, with Flash
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 2048bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1536bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
Single Chip 8-bit Microcomputer
|
Mitsubishi Electric Corporation
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MN103SF92GBL MN103S927 MN103S92A |
MICROCOMPUTER LSI 32-BIT, MROM, 10 MHz, MICROCONTROLLER, PQFP64
Microcomputer - 32bit - General Purpose
|
Panasonic, Corp.
Panasonic Semiconductor
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| M16C30L M16C30M8 M16C30MA M16C30MC M3030M8 M3030MA |
16-BIT, MROM, 16 MHz, MICROCONTROLLER, PQFP100 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 单片16CMOS微机
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 单片16位CMOS微机
(M30302Mx) Single-Chip 16-Bit CMOS Microcomputer
|
Renesas Electronics, Corp.
Renesas Electronics Corporation.
http://
|
