| PART |
Description |
Maker |
| IS24C64B IS24C64A IS24C64A-2G |
8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
65/536-bit/32/768-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution Inc
|
| MH8S64BALD-6 |
536,870,912-BIT ( 8,388,608-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88ALK-15 |
x8 SRAM
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS
65536 Bit RAM
|
etc
LG Semicon Co.,Ltd.
|
| M5M5255DP-45LL M5M5255DP-45XL M5M5255DP-55LL M5M52 |
262 /144-BIT (32 /768-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IS24C02A-2ZI IS24C04A-2PI |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc.
|
| IS24C02A-3ZLA3 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
天津新技术产业园区管理委员会
|
| IS24C08A-3PLA3 IS24C02A-3SLA3 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Integrated Silicon Solution, Inc.
|
| TC9WMB2FK TC9WMB1FK |
1024-Bit (128 x 8 Bit) / 2048-Bit (256 x 8 Bit) 2-Wire Serial E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM
(TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| TMM24256BP-20 TMM24256BP-17 TMM24256BF-20 TMM24256 |
200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
|
TOSHIBA
|
| MSM51C464A-10 MSM51C464A-70 MSM51C464A MSM51C464A- |
65,536-WORD X 4-BIT DYNAMIC RAM
|
OKI electronic componets
|
