PART |
Description |
Maker |
HCF4532 HCF4532B HCF4532BC1 HCF4532BEY HCF4532BM1 |
8BIT PRIORITY ENCODER 8?BIT PRIORITY ENCODER 8-BIT PRIORITY ENCODER Octal Buffers Drivers With 3-State Outputs 20-LCCC -55 to 125
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
BH2220FVM-TR |
8bit 3ch D/A converter
|
ROHM
|
BH2228FV |
8bit 6ch D/A converter
|
ROHM[Rohm]
|
MN101C77C MN101C77A |
Microcomputer - 8bit - General Purpose
|
Panasonic
|
MN101E16K MN101E16M |
Microcomputer - 8bit - General Purpose
|
Panasonic
|
H8_3826R H8_3827R H83827R H83827S H8_827S |
8BIT SINGLE CHIP MICROCOMPUTER
|
HITACHI[Hitachi Semiconductor]
|
EM6819 |
Sub-1V (0.6V) 8bit Flash MCU DC-DC Converter
|
EM Microelectronic - MARIN SA
|