| PART |
Description |
Maker |
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| TS53YL500OHM/-20TR TS53YL50OHM/-20TR TS53YL20OHM/- |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 5000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 2000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50000 ohm
|
Vishay Intertechnology, Inc.
|
| IRFD9220 FN2286 |
600 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET
From old datasheet system
0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
|
Intersil Corporation
|
| IRF9640 RF1S9640SM FN2284 |
11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs
From old datasheet system
11A 200V 0.500 Ohm P-Channel Power MOSFETs
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| IRFF210 FN1887 |
2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET
From old datasheet system
2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| PHX4N50 |
3.1 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| 2SK3200 |
10 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SANKEN ELECTRIC CO LTD
|
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