| PART |
Description |
Maker |
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| IRFF430 FN1894 |
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET 2.75 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
Intersil Corporation
|
| PSO0.5 |
RESISTOR, WIRE WOUND, 1.5 W, 5; 10; 20 %, 1000; 1500; 3000 ppm, 500 ohm - 500000000 ohm, CHASSIS MOUNT ROHS COMPLIANT
|
KOA Speer Electronics,Inc.
|
| TS53YL500OHM/-20TR TS53YL50OHM/-20TR TS53YL20OHM/- |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 5000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 2000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50000 ohm
|
Vishay Intertechnology, Inc.
|
| IRF9620 FN2283 |
3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRFD9220 FN2286 |
600 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET
From old datasheet system
0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
|
Intersil Corporation
|
| PPF440J |
N Channel MOSFET; Package: TO-257; ID (A): 4.4; RDS(on) (Ohms): 0.85; PD (W): 60; BVDSS (V): 500; Rq: 2.1; 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
|
Microsemi, Corp.
|
| IRF610 FN1576 |
3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRFP9240 FN2294 |
From old datasheet system
12A 200V 0.500 Ohm P-Channel Power MOSFET
12A, 200V, 0.500 Ohm, P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRFP230 SSH40N15A SSH20N50A IRFP330 SSH60N10A |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
40 A, 150 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
60 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
|
FAIRCHILD SEMICONDUCTOR CORP
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| 2SK1524 FP15W50 |
15 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
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