PART |
Description |
Maker |
2SB1168 2SD1725 |
100V/4A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
CDSU4148S-HF |
Halogen Free Switching Diodes, V-RRM=100V, V-R=100V, P-D=150mW, I-F=150mA SMD Switching Diode
|
Comchip Technology
|
2SA141612 EN2005C EN2005 |
Bipolar Transistor, (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single PCP High-Voltage Switching Applications
|
ON Semiconductor Sanyo Semicon Device
|
EN3094B EN3094 |
Bipolar Transistor, (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single NMP High-Voltage Switching Applications
|
ON Semiconductor Sanyo Semicon Device
|
2SC4489 2SA1709 2SC4489R |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一(c)|园区 High-Voltage Switching Applications
|
Toshiba, Corp. SANYO[Sanyo Semicon Device]
|
MMBD4448HADW MMBD4448HAQW MMBD4448HCDW MMBD4448HCQ |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications SURFACE MOUNT FAST SWITCHING DIODE ARRAY 表面贴装快速开关二极管阵列
|
DIODES[Diodes Incorporated] Diodes, Inc.
|
TPCS8008-H |
High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications
|
Toshiba Semiconductor
|
GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
SSM6N15FU |
High Speed Switching Applications Analog Switching Applications TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
2SC5176 E001060 |
From old datasheet system NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING, DC-DC CONVERTER APPLICATIONS) HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONCERTER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|