| PART |
Description |
Maker |
| HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| TC7MH163FK TC7MH161FK |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 东芝的CMOS数字集成电路硅单
Synchronous Presettable 4-Bit Binary Counter Asynchronous Clear
Synchronous Presettable 4-Bit Binary Counter Synchronous Clear
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| HEF40162 HEF40162B HEF40162BD HEF40162BF HEF40162B |
Hex D-type flip-flop
4-bit synchronous decade counter with synchronous reset
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| CY7C178-10NC CY7C178-12JC CY7C178-8NC CY7C178 CY7C |
16-Bit Level Shifting Transceiver
32K x 18 Synchronous Cache RAM 32K X 18 CACHE SRAM, 10 ns, PQCC52
32K x 18 Synchronous Cache RAM 32K的18同步高速缓存内
32K x 18 Synchronous Cache RAM 32K X 18 CACHE SRAM, 8.5 ns, PQFP52
IC DRVR UNIV 20BIT 3ST 56-TSSOP
18-Bit Universal Bus Driver, LE/
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
| K7A403609A K7A401809A K7A403609B |
256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet
128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MM74C192 MM74C192N MM74C193M MM74C193N |
Synchronous 4-Bit Up/Down Decade Counter . Synchronous 4-Bit Up/Down Binary Counter
|
FAIRCHILD[Fairchild Semiconductor]
|
| FM93C06E FM93C06 FM93C06V FM93C06L FM93C06LZ FM93C |
256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
From old datasheet system
256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS)
256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999)
128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7A401800M |
256K x 18-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
256Kx18 Synchronous SRAM
|
Samsung Electronic
Samsung semiconductor
|
