PART |
Description |
Maker |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W.
|
USHA India LTD
|
2SD526 2SD526R 2SD526Y |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB POWER TRANSISTORS(4A/80V/30W) POWER TRANSISTORS(4A,80V,30W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
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IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A) Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rdson)\u003d 0.018ohm,身份证\u003d 37A条) Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A) 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRIS4007K IRIS4007 IR4007 IRIS40X IRISMPS1 |
INTEGRATED SWITCHER 多功能开 DC-DC flyback power supply, IRIS4007(K), 48VIN, 5VOUT, 5A IOUT 30W Output DC-DC Integrated Switchers in a TO-262 (5-Lead) package 30W Output DC-DC Integrated Switchers in a TO-220 (5-Leads) package
|
International Rectifier, Corp. IRF[International Rectifier] http://
|
IRFIZ34V IRFIZ34VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
|
IRF[International Rectifier]
|
TDA7265B |
30W 30W stereo amplifier
|
STMicroelectronics
|
2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN Medium power transistor (60V/ 1A) Medium power transistor (−60V, −1A) Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd. ROHM[Rohm]
|
5962-05238 5962-05240 5962-05241 5962-05242 5962-0 |
30W Total Output Power 28 Vin 1.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05238 30W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05240 30W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05241 30W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05242 30W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-06241 30W Total Output Power 28 Vin 2.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package.
|
International Rectifier
|
IRF1010E IRF1010EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 12mohm,身份证\u003d 84A条? Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
|
International Rectifier, Corp.
|
IRLD024 |
60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package HEXFET? Power MOSFET Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)
|
IRF[International Rectifier]
|
2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
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