| PART |
Description |
Maker |
| 2SA1045 |
Silicon Ring Emitter Darlington Transistors
|
Fujitsu
|
| 2SC2435 |
Silicon Ring Emitter Darlington Transistors
|
Fujitsu
|
| BF550 Q62702-F944 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) 25 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| DC337-16-25-40 BC327-16 BC328-16 ON0144 BC328-25 |
Amplifier Transistors(PNP Silicon)
From old datasheet system
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
|
ON Semiconductor
Siemens Semiconductor Group
|
| DDTB142TC-7 |
TRANS PREBIASED PNP 200MW SOT-23 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes, Inc.
|
| DP500 |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
| DP100 |
Extremely low collector-to-emitter saturation voltage
PNP Silicon Transistor
|
KODENSHI KOREA CORP.
AUK corp
|
| DP030 |
-300 mA, PNP silicon transistor
Extremely low collector-to-emitter saturation voltage
|
AUK[AUK corp]
KODENSHI KOREA CORP.
|
| 2SB1302 SB1302 |
PNP Epitaxial Planar Silicon Transistors
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| TIP145T |
PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorPNP硅外延达林顿晶体管（内置基极-射极分流电阻单片结构
|
Fairchild Semiconductor Corporation
|
| MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
